首页> 外国专利> A METHOD FOR COATING A SUBSTRATE USING A MEDIUM TEMPERATURE CHEMICAL VAPOR DEPOSITION PROCESS

A METHOD FOR COATING A SUBSTRATE USING A MEDIUM TEMPERATURE CHEMICAL VAPOR DEPOSITION PROCESS

机译:一种采用中温化学气相沉积法涂覆基质的方法

摘要

The present invention comprises a method for coating at least one substrate with a carbonitride-containing coating by a MT CVD process which includes heating a substrate or substrates to a reaction temperature in a reaction chamber and then introducing into the reaction chamber a deposition process gas comprising from about 1 to about 30% of a hydrogen halide and predetermined amounts of a carbon/nitrogen source, a metal-halogen compound, H2, and optionally N2 so that a layer of the carbonitride-containing coating deposits on the surface of the substrates or substrates. The present invention also includes embodiments for coating at least one substrate with a carbonitride-containing coating by a MT CVD process which includes maintaining a temperature gradient in the reaction chamber during the introduction of the deposition process gas into the reaction chamber. Carbonitride-containing coatings that may be applied by the method include carbonitrides, oxycarbonitrides, and borocarbonitrides of Ti, Hf, Zr, V, Nb, and Ta and their mixtures and alloys.
机译:本发明包括一种通过MT CVD工艺用含碳氮化物的涂层涂覆至少一个基板的方法,该方法包括在反应室中将一个或多个基板加热到反应温度,然后将沉积工艺气体引入到反应室中,所述沉积工艺气体包括:约1%至约30%的卤化氢和预定量的碳/氮源,金属卤素化合物,H2和可选的N2,以便在基材表面上沉积一层含碳氮化物的涂层或基材。本发明还包括通过MT CVD工艺用含碳氮化物的涂层涂覆至少一个基底的实施方案,该MT CVD工艺包括在将沉积工艺气体引入反应室的过程中保持反应室中的温度梯度。可以通过该方法施加的含碳氮化物的涂层包括Ti,Hf,Zr,V,Nb和Ta的碳氮化物,氧碳氮化物和硼碳氮化物及其混合物和合金。

著录项

  • 公开/公告号IL144500D0

    专利类型

  • 公开/公告日2002-05-23

    原文格式PDF

  • 申请/专利权人 KENNAMETAL INC.;

    申请/专利号IL20000144500

  • 发明设计人

    申请日2000-02-24

  • 分类号7C23CA;

  • 国家 IL

  • 入库时间 2022-08-22 00:44:48

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