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High power mid wavelength infrared laser
High power mid wavelength infrared laser
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机译:大功率中波长红外激光
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摘要
The subject invention comprises a high power MWIR laser grown as a Double Heterostructure by MOCVDMBE or a combination of the two growth techniques. The Double Heterostructure is prepared as InAsSb/InAsSbP/AlAsSb/InAs. This structure is etched to form mesas and contacts are applied. The MWIR laser of the subject invention may be used in various optoelectric and electronic devices such as detectors, transistors, and waveguide.
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