Carbon-doped Silicon Semiconductor Devices with Narrow Band Gap Characteristics and Methods of Forming Them

摘要

Provided are IV-IV semiconductor devices 21 and 41 having narrower bandgap characteristics than silicon, and methods for forming the same. By incorporating carbon into silicon at substitution concentrations between 0.5% and 1.1%, semiconductor devices 21 and 41 having narrow bandgaps and good crystalline compared to silicon are achieved. Semiconductor devices 21 and 41 are suitable for semiconductor heterojunction devices using narrow bandgap regions.