MIS structure of the semiconductor device to the extensive legal issues

摘要

the content of the gate insulating film, and the film is about three u339a, and boron penetration phenomenon to prevent the MIS structure, semiconductor device, manufacturing method of the in. a silicon nitride film formed on the semiconductor board, thermal oxidation, ion injection and plasma doping method and a suitable process of oxygen in silicon nitride film on silicon with doping, the formation of scattered, the scattered in the silicon block and scattered. the interface between and along the legs to be oxygen - rich areas. the oxygen - rich area is scattered with other areas of the silicon concentration is higher than the oxygen. at least one of silicon and the scattered part of the gate insulating film MISFET to play a role. furthermore, the gate electrode of the MISFET scattered on the formation of a silicon gas.boron - doping the gate electrode of each of the pair of source - MISFET of drainage area in order to form a board, board, i also have a choice with the concept. finally, i give the concept of the activity or not, and, for the heat treatment.