Dielectric material using reactive dendrimer and starburst compound and process for manufacturing thin film formed of the same

摘要

PURPOSE: A dielectric material and a method for forming a thin layer using reactive dendrimer and starburst compound are provided to provide low-dielectric material and a low permittivity and excellent properties required to a semiconductor manufacturing process and the durability of semiconductors. CONSTITUTION: The dielectric material comprises dendrimer or starburst, which end has organosilane as follow: (R1O)m(R2)nSiR3 here, m+n=3, m=1, 2 or 3, R1 and R2 are independent C1-C10 aliphatic alkyl groups, R3 is alkyl group of 1-10 carbon number having vinyl, halogen, alkoxy, nitro, nitrile, amine, acryloxy or epoxy groups substituent in its end. The dendrimer is poly(amidoamine) or polypropylene dendrimer. The starburst is poly(-carprolactone) starburst.