Dielectric material using reactive dendrimer and starburst compound and process for manufacturing thin film formed of the same

摘要

The present invention is a low dielectric material and as it relates to a process for the preparation, to the low-k materials, including dendritic (dendrimer), or a starburst (starburst) having the silane compound (organosilane) a terminal having an organic substituent of the formula (1), the low method for synthesis of genetic material, and provides a process for the preparation of ultra-low dielectric films using the low dielectric material:; Formula 1; _{^{(R 1 O) m (R}} 2) n SiR 3.; Wherein R is a m + n = 3 and m is 1, 2 or 3, R ¹ and R ² are independently C ₁ -C ₁₀ aliphatic alkyl group of one another, R ³ is vinyl, halogen, alkoxy, nitro, nitrile, is a hydrocarbon group having an amine, acryloxy or epoxy group as a terminal substituent.