SILICON NITRIDE POWDER SINTERED SILICON NITRIDE SINTERED SILICON NITRIDE SUBSTRATE AND CIRCUIT BOARD AND THERMOELECTRIC ELEMENT MODULE COMPRISING SUCH SINTERED SILICON NITRIDE SUBSTRATE

摘要

PURPOSE: Provided is a highly thermal conductive-type silicon nitride-based sintered compact having an excellent mechanical strength and the enhanced thermal conductivity more than before without the anisotropy in the direction of thermal conduction. CONSTITUTION: The method for manufacturing a silicon nitride-based power is characterized in that the raw material, which contains oxygen in the range of 0.02-2 wt.% in SiO2 conversion and has a specific surface area of larger than 0.5 m¬2/g, is characteristically heated above 1,800C in the non-acidic atmosphere of nitrogen or nitrogen/hydrogen.