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cathode structure and its manufacturing method for a CRT using cold cathode electron emission source

机译:冷阴极电子发射源的阴极射线管阴极结构及其制造方法

摘要

PURPOSE: A method for fabricating a cathode for cathode ray tube using a cold cathode electron emission source and a structure thereof are provided to emit uniformly electrons and improve electric characteristics by forming a catalysis on a substrate in a predetermined interval and growing a carbon nano tube. CONSTITUTION: A thermal oxide layer is formed on an upper face of a base metal(10). The thermal oxide layer is processed by a photo-lithography method and a thermal oxide layer pattern is formed thereby. An etch part(11) and a non-etch part(12) are formed by etching the base metal(10). A metal used as a catalysis is deposited by using a sputtering method and an electron beam deposition method and a catalysis metal layer(31) is formed thereby. The thermal oxide layer pattern is removed by using a BHF(Buffered HydroFluoric) method. The catalysis metal layer(31) is formed uniformly by removing the catalysis metal layer from the thermal oxide layer pattern. A carbon nano tube is formed on the catalysis metal layer(31) by using a thermal CVD(Chemical Vapor Deposition) method.
机译:目的:提供一种使用冷阴极电子发射源制造阴极射线管阴极的方法及其结构,以通过以预定间隔在基板上形成催化并生长碳纳米管来均匀地发射电子并改善电特性。 。组成:在贱金属(10)的上表面形成热氧化层。通过光刻法处理热氧化层,从而形成热氧化层图案。通过蚀刻母材(10)形成蚀刻部(11)和非蚀刻部(12)。通过溅射法和电子束沉积法沉积用作催化的金属,从而形成催化金属层(31)。通过使用BHF(缓冲氢氟酸)方法去除热氧化物层图案。通过从热氧化物层图案中去除催化金属层来均匀地形成催化金属层31。通过使用热CVD(化学气相沉积)方法在催化金属层(31)上形成碳纳米管。

著录项

  • 公开/公告号KR20020041496A

    专利类型

  • 公开/公告日2002-06-03

    原文格式PDF

  • 申请/专利权人 ORION ELECTRIC CO. LTD.;

    申请/专利号KR20000071122

  • 发明设计人 LEE CHANG HAN;LEE JU CHEOL;

    申请日2000-11-28

  • 分类号H01J1/30;

  • 国家 KR

  • 入库时间 2022-08-22 00:30:58

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