PURPOSE: A nitride semiconductor vertical-cavity surface-emitting laser is provided to equally inject an electric current at an electric current inputting area by employing a thin p-n tunnel junction layer as the electric current inputting area and by forming a lower ohmic contact layer and an upper ohmic contact layer as n-type nitrides semiconductor layer. CONSTITUTION: An electric current inputting area of a nitride semiconductor vertical-cavity surface-emitting laser is constituted of a tunnel junction area comprising a p-type nitride semiconductor layer and a n-type nitride semiconductor layer. In the p-type nitride semiconductor layer, a p-type dopant having a concentration of 5x10¬18 - 1x10¬21cm¬-3 is doped. In the n-type nitride semiconductor layer, a n-type dopant having a concentration of 5x10¬18 -1x10¬21cm¬-3 is doped. A lower mirror stack(20) and a n-type ohmic contact layer(30) are deposited onto a substrate(10) in sequence. A n-type lower clad layer(40), an activation layer(50), a p-type upper clad layer(60) and a n-type upper ohmic contact layer(80) are deposited onto a central upper surface of the n-type ohmic contact layer(30). The tunnel junction area(70) comprising the p-type nitride semiconductor layer(72) and the n-type nitride semiconductor layer(74) is deposited onto a central upper surface of the p-type upper clad layer(60).
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