SOI Structure and fabrication of thermo-optic switch using SOI

摘要

PURPOSE: A thermal optical switch using an SOI substrate and a manufacturing method thereof are provided to increase a heat distribution difference by forming a trench at a heat transfer path. CONSTITUTION: SiNx is deposited at both surfaces of an SOI substrate. An upper layer portion is formed by a sensitive film to protect the SiNx. A lower layer portion is formed by a sensitive film to form a pattern of the SiNx. The SiNx is etched to form a part for forming a silicon trench using KOH. A metal thin film having a high heat conduction is deposited at a lower silicon layer in order to increase a heat resistance and a cooling effect of a heat. SiNx layer pattern is formed on a trench area in order to form an optical switch output waveguide pattern. The sensitive film is removed and a silicon optical waveguide. SiNx layer is deposited on an optical waveguide and a metal electrode for a heater is formed at a predetermined location.