Photomask for dual damascene process method thereof and method of forming dual damascene interconnection using the photomask

摘要

PURPOSE: A photo mask for dual damascene process, a method for fabricating the same, and a method for fabricating a dual damascene line using the same are provided to distribute uniformly intensity of light on a wire formation region and exclude an influence of HTPS(Half Tone Phase Shift). CONSTITUTION: A non-transparent layer and the first etch mask layer are formed sequentially on a substrate(100). The non-transparent layer is formed by chrome. The first pattern is formed on the first etch mask layer in order to define a wire region. The non-transparent layer is etched by using the first etch mask layer as an etch mask. The second etch mask layer(308) is formed on front faces of the substrate(100) and the first pattern. The second pattern(310) is formed on the second etch mask layer(308). The substrate(100) is etched by using the second pattern(310) as the etch mask.