Plasma Source Ion Implantation Method Using Pulsed Plasma and System Thereof

摘要

PURPOSE: An ion implantation method using pulse plasma is provided to effectively improve abrasion resistance and intensity of the surface of a sample, by applying a radio frequency(RF) pulse and a negative direct current(DC) high voltage to a plasma generating gas and by uniformly implanting ions into the surface of the sample. CONSTITUTION: The sample is positioned on a sample table(14) inside a vacuum bath(10). Gas to be transformed into plasma is supplied to the vacuum bath. An RF pulse is radiated to the gas. The negative DC high voltage is applied to the sample to implant plasma ions of a plasma state into the surface of the sample.