Fabrication of Si NiSix Si wafer pairs

摘要

PURPOSE: A fabrication of Si NiSix Si wafer pairs is provided to easily embody an electrical interconnection by manufacturing a structure sequentially made of a silicon/a nickelsilicide/a silicon. CONSTITUTION: A nickel layer is formed on the entire surface of a first silicon substrate after removing an oxide. A second silicon substrate is prepared to perform a following step after removing an oxide. Then, the first silicon substrate and the second silicon substrate are connected by confronting each other in a high cleaning condition having a class 100 or higher. A nickelsilicide is formed by performing a thermal processing on the nickel thin film located between the first and second silicon substrate at a room temperature or higher to 1300deg.C.