Field emission device having an improved ballast resistor

摘要

The field emission device 100 has a cathode 110 and a stabilizing resistor 112 connected to the cathode 110. The stabilization resistor 112 includes a thin metal layer 113 and a protective layer 114 disposed over the metal layer 113. The metal layer 113 is made of chromium and has a thickness of about 40 angstroms. The protective layer 114 is made of sputtered silicon and has a thickness of about 500 angstroms. A portion of the metal layer 113 is made to physically contact the cathode 110 and is sandwiched between the cathode 110 and the protective layer 114. The protective layer 114 is positioned to block the metal layer 113 from the high transient voltages.