Field emission device with improved ballast resistor.

摘要

A field emission device (100) includes a cathode (110) and a ballast resistor (112) connected to cathode (110). Ballast resistor (112) includes a thin metallic layer (113) and a protective layer (114) disposed on metallic layer (113). Metallic layer (113) is made from chromium and has a thickness of about 40 angstroms. Protective layer (114) is made from sputtered silicon and has a thickness of about 500 angstroms. A portion of metallic layer (113) makes physical contact with cathode (110) and is sandwiched between cathode (110) and protective layer (114). Protective layer (114) is positioned to shield metallic layer (113) from high transient voltages.