首页> 外国专利> METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE CONTROL METHOD AND CONTROL APPARATUS THEREFOR AND SIMULATION METHOD AND SIMULATION APPARATUS OF MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE

METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE CONTROL METHOD AND CONTROL APPARATUS THEREFOR AND SIMULATION METHOD AND SIMULATION APPARATUS OF MANUFACTURING PROCESS OF SEMICONDUCTOR DEVICE

机译:制造半导体器件的方法和装置控制方法及其控制装置以及制造半导体器件的过程的仿真方法和模拟装置

摘要

PURPOSE: To provide a method of manufacturing a semiconductor device, which conducts semiconductor manufacturing process utilizing a thermochemical reaction in a proper condition, irrespective of the atmospheric conditions. CONSTITUTION: In a specified semiconductor manufacturing process utilizing a thermochemical reaction, the semiconductor manufacturing process is started, based on prescribed process executing initial settings, the condition of the atmosphere in a specified system being in progress of the thermochemical reaction and its change are measured and analyzed at specified time intervals and the analysis result is fed back to the semiconductor manufacturing process.
机译:目的:提供一种制造半导体器件的方法,该方法利用热化学反应在适当的条件下,与大气条件无关地进行半导体制造过程。组成:在利用热化学反应的特定半导体制造过程中,根据执行初始设置的规定过程开始半导体制造过程,测量特定系统中正在进行热化学反应的气氛条件及其变化并以指定的时间间隔进行分析,并将分析结果反馈给半导体制造过程。

著录项

  • 公开/公告号KR20020077247A

    专利类型

  • 公开/公告日2002-10-11

    原文格式PDF

  • 申请/专利权人 KABUSHIKI KAISHA TOSHIBA;

    申请/专利号KR20020017342

  • 发明设计人 NAKAMURA MITSUTOSHI;USHIKU YUKIHIRO;

    申请日2002-03-29

  • 分类号H01L21/00;

  • 国家 KR

  • 入库时间 2022-08-22 00:30:16

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号