首页> 外国专利> 2 Semiconductor device in which MPU and DRAM as secondary cache memory are mounted on same chip to easily realize high speed of cycle time under restriction on chip size

2 Semiconductor device in which MPU and DRAM as secondary cache memory are mounted on same chip to easily realize high speed of cycle time under restriction on chip size

机译:2将MPU和DRAM作为二级缓存存储在同一芯片上的半导体器件,可在芯片尺寸限制下轻松实现高速循环时间

摘要

A semiconductor device, MPU (micro processing unit) provided with portions, DRAM (dynamic random access memory) unit, a plurality of address registers, and a plurality of address delay compensation. MPU unit is provided on the chip and outputs the clock signal and an address signal. DRAM portion is provided on a chip to input a clock signal and an address signal. Each of the plurality of address registers and latches an address signal in response to the clock signal. Each of the plurality of address delay compensation unit compensates for the address signal is provided to the front end transmission delay address signal transmission delay time to fall within a predetermined range of said plurality of address registers. Address signal transmission delay represents an elapsed time until the input of the MPU portion and the address signal is the address signal, each said address register after the output.
机译:半导体装置,具有部分的MPU(微处理单元),DRAM(动态随机存取存储器)单元,多个地址寄存器和多个地址延迟补偿。 MPU单元设置在芯片上,并输出时钟信号和地址信号。 DRAM部分设置在芯片上以输入时钟信号和地址信号。多个地址寄存器中的每一个都响应于时钟信号而锁存地址信号。多个地址延迟补偿单元中的每一个补偿地址信号被提供给前端传输延迟地址信号传输延迟时间,以使其落入所述多个地址寄存器的预定范围内。地址信号传输延迟表示直到MPU部分的输入和地址信号是地址信号为止的经过时间,每个所述地址寄存器在输出之后。

著录项

  • 公开/公告号KR100323578B1

    专利类型

  • 公开/公告日2002-02-19

    原文格式PDF

  • 申请/专利权人 NULL NULL;

    申请/专利号KR19990055089

  • 发明设计人 스기바야시다다히코;

    申请日1999-12-06

  • 分类号G06F13/14;

  • 国家 KR

  • 入库时间 2022-08-22 00:30:01

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