CHARGED PARTICLE BEAM EXPOSURE METHOD AND METHOD FOR MAKING PATTERNS ON WAFER

摘要

In the charged particle beam exposure method, a plurality of transfer patterns are formed by performing the pattern exposure so that the opening mask for partial batch exposure does not overlap. In the case of doing this, the exposure is performed at an exposure amount of 1/2 of the amount in which one pattern can be formed. Thereafter, exposure is performed by changing the dice so that the exposure position overlaps with the previous exposure position, and a subsequent transfer pattern is formed. When this is done, this exposure amount is also about 1/2 of the amount required to form a pattern. In this method, exposure is performed twice each at an exposure amount of 1/2 the hour while moving the exposure position.