BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a low repair circuit of a semiconductor memory device. In particular, since a low repair circuit exists in a low decoder, a low address signal is inputted, decoded, and output as a normal word line so that a repair circuit is not required. A row decoding unit 10; A low repair word line driver 20 for repairing by turning on the repair word line RWLi; And generate a signal for repair at a next stage of the row decoding unit 10 that decodes the input row address. The row repair word line driver 20 according to the output decoded by the row decoding unit 10. It relates to a low repair circuit using a low decoder comprising a repair signal generator 30 for generating a normal low disable signal (nrd) for driving ().
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