BOROPHOSPHOSILICATE GLASS INCORPORATED WITH FLUORINE FOR LOW THERMAL BUDGET GAP FILL

摘要

The invention relates to a method of depositing a fluorinated borophosphosilicate glass (FBPSG) on a semiconductor device as a final dielectric film or an interlayer dielectric film. 6: the gap having an aspect ratio greater than 1 is substantially filled with the FBPSG film without pores at a temperature of less than approximately 200Torr atmospheric pressure of about 480 ℃. A gaseous reactant to be used in the method preferably comprises an ozone / with oxygen mixture of tetraethyl orthosilicate (TEOS), fluoro roteuri ethoxysilane (FTES), triethyl phosphate (TEPO), triethyl borate (TEB) Do. Crystallite surface defects and boron dopant concentration and the dopant concentration is low enough to prevent moisture absorption. The film deposited in the gap between the lower the aspect ratio is not does not substantially contain an air gap is required the subsequent annealing of the film. The film deposited within the gap between the higher aspect ratio is annealed at about 750 ℃ ​​or less in the heat balance of most dynamic random access memory (DRAM), logic chip, logic chip coupled -DRAM. The resulting FBPSG layer contains boron and about 5.0 wt% or less, of less than about 4.0% by weight, and the fluorine from about 0.1% to 2.0% by weight.