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Dead time compensation device of high power transistor (IGBT) to prevent current ripple

机译:高功率晶体管(IGBT)的死区补偿装置,可防止电流波动

摘要

The disclosed design relates to a dead time compensation device of a large power transistor (IGBT) for preventing current ripple, in particular by a mismatch of switching signals applied to the large power transistor (IGBT) that determines the rotation speed and direction of the induction motor. This is to prevent current ripple from occurring. The present invention outputs a predetermined control signal that determines the switching time and phase by the control unit that controls the rotational speed and direction of the induction motor as a whole, and generates a switching signal for driving a pair of large power transistors based on the control signal. By applying it, it is possible to fundamentally prevent the occurrence of current ripple due to the inconsistency of the switching signals.
机译:所公开的设计涉及一种大功率晶体管(IGBT)的空载时间补偿装置,用于防止电流波动,特别是通过施加到大功率晶体管(IGBT)的开关信号的失配来确定电流的波动和感应方向,该电流信号不匹配。发动机。这是为了防止产生电流纹波。本发明通过控制单元输出预定的控制信号,该预定的控制信号确定开关时间和相位,该控制单元整体上控制感应电动机的旋转速度和方向,并基于该单元产生用于驱动一对大功率晶体管的开关信号。控制信号。通过应用它,可以从根本上防止由于开关信号的不一致而引起的电流纹波的发生。

著录项

  • 公开/公告号KR200259851Y1

    专利类型

  • 公开/公告日2002-02-19

    原文格式PDF

  • 申请/专利权人 삼성중공업 주식회사;

    申请/专利号KR19960046133U

  • 发明设计人 김정식;

    申请日1996-12-06

  • 分类号H02P6/10;

  • 国家 KR

  • 入库时间 2022-08-22 00:29:04

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