Silicon wafer used in the production of electronic components has crystal-originated particles in its surface which change in morphology in such a way that there is no destructive influence on the gate oxide material

摘要

Silicon wafer has crystal-originated particles in its surface which change in morphology in such a way that there is no destructive influence on the gate oxide material. An Independent claim is also included for the production of a silicon wafer comprising wet chemical treatment of the wafer using an etchant. Preferably the etchant is made from 0.1-10 wt.% HF, 10-70 wt.% HNO3 and 20-90 wt.% H2O. The wet chemical treatment is carried out for 1-240 seconds.