Integrated circuit used in DRAMs and SDRAMs comprises a switching element formed in a substrate, a further switching element buried in the substrate, and an insulating layer lying between the elements and locally limited in the substrate

摘要

Integrated circuit comprises: a switching element (AT) formed in a substrate (1); a switching element (160) buried in the substrate away from the element (AT); and an insulating layer (7) lying between the elements and locally limited in the substrate. An Independent claim is also included for a process for the production of an integrated circuit, comprising forming trenches (10) in a substrate (1), forming an outer conducting layer on lower regions of the trenches within the substrate as first capacitor plates, forming dielectric layers in the trenches as capacitor dielectric, forming an inner conducting layer (5) in the trenches as second capacitor plates, and forming insulating areas (7) on wall sections of the trenches above the outer conducting layer. Preferred Features: The insulating layer is a thermal oxide. The substrate is a single crystalline semiconductor substrate.