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Support matrix for integrated semiconductors, has frame, conductor track structures, and flowable silicon structures

机译:集成半导体的支撑矩阵,具有框架,导体轨道结构和可流动的硅结构

摘要

A support matrix comprises a frame; conductor track structures running on the frame, and having bonding lead(s) for connecting the conductor track structures to an integrated semiconductor; and flowable silicon structures disposed in a region of the bonding lead(s) and serving to space apart the support matrix and the integrated semiconductor. A support matrix comprises a frame; conductor track structures running on the frame, and having bonding lead(s) for connecting the conductor track structures to an integrated semiconductor; and flowable silicon structures disposed in a region of the bonding lead(s) and serving to space apart the support matrix and the integrated semiconductor. The bonding lead has a bonding region, and groove(s) formed between the bonding region and the conductor track structures. The groove (7, 8) functions as a barrier for preventing a flow of the flowable silicon structures onto the bonding region. An Independent claim is also included for a method of producing the support matrix, comprising forming groove(s) between the bonding region of the bonding lead and the conductor track structures; and forming the flowable silicon structures on the frame (12) serving to space apart the support matrix and the semiconductor.
机译:支撑矩阵包括框架。导体轨道结构在框架上运行,并具有用于将导体轨道结构连接到集成半导体的键合引线;以及可流动的硅结构,其布置在键合引线的区域中并且用于将支撑矩阵和集成半导体间隔开。支撑矩阵包括框架。导体轨道结构在框架上运行,并具有用于将导体轨道结构连接到集成半导体的键合引线;以及可流动的硅结构,其设置在键合引线的区域中并且用于将支撑矩阵和集成半导体间隔开。键合引线具有键合区域以及在键合区域与导体轨道结构之间形成的凹槽。凹槽(7、8)用作阻挡物,以防止可流动的硅结构流到键合区域上。还包括用于制造支撑矩阵的方法的独立权利要求,该方法包括在键合引线的键合区域和导体迹线结构之间形成凹槽。在框架(12)上形成可流动的硅结构,以将支撑矩阵和半导体隔开。

著录项

  • 公开/公告号DE10034018A1

    专利类型

  • 公开/公告日2002-01-24

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2000134018

  • 发明设计人 KAHLISCH KNUT;MIETH HENNING;

    申请日2000-07-07

  • 分类号H01L23/50;H01L21/58;H01L21/60;

  • 国家 DE

  • 入库时间 2022-08-22 00:27:38

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