首页> 外国专利> Production of integrated circuit comprises applying metallization layers to circuit substrate, and forming hard mask at predetermined temperature which effects phase conversion

Production of integrated circuit comprises applying metallization layers to circuit substrate, and forming hard mask at predetermined temperature which effects phase conversion

机译:集成电路的生产包括将金属化层施加到电路基板上,以及在预定温度下形成影响相转换的硬掩模。

摘要

The production of an integrated circuit comprises preparing a circuit substrate (1); applying metallization layers (5, 10) to the substrate; forming a hard mask (20) on the metallization layers; and structuring the metallization layers using the mask. The mask is applied at a predetermined temperature which effects a phase conversion in the metallization layers. Preferred Features: The first metallization layer (5) is a liner layer and the second metallization layer is an aluminum layer. The predetermined temperature is approximately 400 deg C or more. The hard mask is produced by CVD deposition of a SiO2-based material.
机译:集成电路的生产包括准备电路基板(1);将金属化层(5、10)施加到基板上;在金属化层上形成硬掩模(20);并使用掩模构造金属化层。在预定温度下施加掩模,该预定温度实现金属化层中的相变。优选特征:第一金属化层(5)是衬里层,第二金属化层是铝层。预定温度为约400℃或更高。硬掩模是通过CVD沉积SiO2基材料制成的。

著录项

  • 公开/公告号DE10053915A1

    专利类型

  • 公开/公告日2002-05-16

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2000153915

  • 发明设计人 VOGT MIRKO;LEHR MATTHIAS UWE;TEWS RENE;

    申请日2000-10-31

  • 分类号H01L21/768;

  • 国家 DE

  • 入库时间 2022-08-22 00:27:21

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