Magneto-resistive random-access memory device uses selection transistors of wide channel width associated with several magnetic tunnel junction memory cells

摘要

The memory device has a matrix of magnetic tunnel junction memory cells (1), each connected between a bit line (B1-B4) and a plate line (PL), with selection transistors coupled to the plate line connected at their gate electrodes to perpendicular word lines (W1-W4). Each selection transistor is associated with several magnetic tunnel junction memory cells, with its channel width determined by the number of associated magnetic tunnel junction memory cells.