Cell field for semiconducting memory has at least one data line to which dummy memory cells are connected to write dummy memory cells via dummy data line

摘要

The cell field (1) has functional memory cells (6) that are writeable via data lines and dummy memory cells (7) in at least one edge region of the cell field. At least one data line (DWL1, DWL2, DBL1, DBL2) is provided to which the dummy memory cells are connected to write the dummy memory cells via the dummy data line. Independent claims are also included for the following: a method of testing a cell field.