SEMICONDUCTOR MEMORY DEVICE HAVING DUMMY CELLS FUNCTIONING AS COMPENSATION CAPACITORS NEAR MEMORY CELLS AND POWER FEED SYSTEM COMBINED TO DUMMY CELL

摘要

PURPOSE: A semiconductor memory device is provided to have dummy cells as compensation capacitors effective to prevent voltage change caused by the action of a circuit combined to a memory cell array. CONSTITUTION: To memorize binary data bits in a reading/rewriting method, plural memory cells are arranged in first areas(110) on the main surface of a semiconductor substrate. Plural dummy cells are arranged on second areas(111) adjacent to the first areas. Thus, a certain geometric pattern is provided from the first area to the second area. Each electronic circuit(102,103,104,105,106) is connected to the memory cells to write/read the binary data bits. An inner power source(107) distributes inner power voltage to the electronic circuits. The inner power source is connected to at least one dummy cell for stabling inner power.