Integrated magnetoresistive semiconductor memory has integrated connecting conductors located in any one of metallization planes and polysilicon connection plane

摘要

The integrated connecting conductors (10) having word lines (1), digit lines (3), bit lines (5) and isolation element activating line, are located in selected plane of any one of the metallization planes and a polysilicon connection plane. An independent claim is included for integrated magnetoresistive semiconductor memory fabrication method.