Integrated magnetoresistive semiconducting memory arrangement has third conductor plane occupied by write selection lines and spatially and electrically separate from first two read planes

摘要

The arrangement has MRAM memory cells at selection line intersections. Read selection lines (5,6) used to read cell information lie in separate first and second conducting planes (1,2) in direct contact with the cells. At least one third plane (3,4) spatially and electrically separate from the first two planes is occupied by write selection lines (7,8) for writing cell information. The arrangement has MRAM memory cells at crossing points of selection lines embedded in separate conductor planes to which a read/write current can be applied to write to each cell and to read the information therein. The selection lines (5,6) used to read cell information lie in separate first and second conducting planes (1,2) in direct contact with the cells. At least one third plane (3,4) spatially and electrically separate from the first two planes is occupied by write selection lines (7,8) for writing cell information. AN Independent claim is also included for the following: a method of writing to an inventive device.