Voltage detection circuit for semiconducting storage component produces voltage level detection signal from amplified difference between reference and comparison voltages or signals

摘要

The circuit has devices for generating reference and comparison voltages or signals, a differential amplifier for producing an amplified difference signal depending on the difference between the reference and comparison signal or voltage, a bypass circuit providing an amplified signal path depending on the comparison voltage or signal and a driver circuit that receives the amplified voltage or signal and produces a voltage level detection signal. The circuit has a first voltage generator (100) connected to a first supply voltage for generating a reference voltage or signal, a second generator (200) connected to a second supply for generating a comparison voltage or signal, a differential amplifier (300) for producing an amplified difference signal depending on the difference between the reference signal or voltage and the comparison signal or voltage, a bypass circuit providing a path for the amplified signal depending on the comparison voltage or signal and a driver circuit (400) that receives the amplified voltage or signal and produces a voltage level detection signal. Independent claims are also included for the following: a method of producing a raised voltage level in a semiconducting storage component.