Method for reading data from e.g. phase change RAM, involves scanning voltage level difference between data voltage and reference voltages to produce differential output signals, and amplifying output signals to produce read data

摘要

The method involves receiving data voltage and reference voltages at a sense amplifier, where the data voltage corresponds to data stored in memory cells. A voltage level difference between the data voltage and the reference voltages at the sense amplifier is scanned to produce differential output signals. The differential output signals are amplified at another sense amplifier, to produce read data for the memory cells. A control logic unit (1220) is provided for controlling overall operation of a controller (1200). An independent claim is also included for a non-volatile memory device.