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Micro-mechanical capacitive acceleration sensor for measuring the acceleration of an object in one or more directions is made from a monolithic silicon crystal and is smaller and less sensitive to interference than existing art
Micro-mechanical capacitive acceleration sensor for measuring the acceleration of an object in one or more directions is made from a monolithic silicon crystal and is smaller and less sensitive to interference than existing art
Sensor comprises a frame (110) and a supported sensor mass (101), made from a wafer and moving relative to the frame. A capacitive detection device (120) generates an output signal proportional to the displacement of the mass relative to the frame. The mass has a center of gravity that is displaced relative to the rotation axis in a direction perpendicular to the wafer plane so that accelerations lateral to the wafer plane can be measured. The invention also relates to a corresponding manufacturing method in which the sensor mass and frame from a monolithic block made from a single crystal silicon wafer. A cover (112) has a common connection plane (150) so that the capacitor elements align.
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