首页> 外国专利> Micro-mechanical capacitive acceleration sensor for measuring the acceleration of an object in one or more directions is made from a monolithic silicon crystal and is smaller and less sensitive to interference than existing art

Micro-mechanical capacitive acceleration sensor for measuring the acceleration of an object in one or more directions is made from a monolithic silicon crystal and is smaller and less sensitive to interference than existing art

机译:用于测量物体在一个或多个方向上的加速度的微机械电容式加速度传感器由整体式硅晶体制成,并且比现有技术更小且对干扰的敏感性更低

摘要

Sensor comprises a frame (110) and a supported sensor mass (101), made from a wafer and moving relative to the frame. A capacitive detection device (120) generates an output signal proportional to the displacement of the mass relative to the frame. The mass has a center of gravity that is displaced relative to the rotation axis in a direction perpendicular to the wafer plane so that accelerations lateral to the wafer plane can be measured. The invention also relates to a corresponding manufacturing method in which the sensor mass and frame from a monolithic block made from a single crystal silicon wafer. A cover (112) has a common connection plane (150) so that the capacitor elements align.
机译:传感器包括框架(110)和由晶片制成并且相对于框架移动的支撑的传感器块(101)。电容检测装置(120)产生与质量相对于框架的位移成比例的输出信号。质量块具有重心,该重心相对于旋转轴在垂直于晶片平面的方向上移动,从而可以测量晶片平面横向的加速度。本发明还涉及一种相应的制造方法,其中传感器块和框架由单晶硅晶片制成的整体块构成。盖(112)具有公共的连接平面(150),使得电容器元件对准。

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