Operating MRAM semiconducting memory involves subjecting memory cell to transient reversible magnetic change while reading information, comparing changed/original current signals

摘要

The method involves subjecting the TMR memory cell (TMR) to a transient reversible magnetic change while reading an information item by applying a current pulse and comparing the resulting changed current signal with the original current signal. The information is stored in the soft magnetic layer of the TMR cell. The pulse is applied to the write line.