A semiconductor laser with a changed width of the quanta potential pots

摘要

An optically emitting device comprises a semiconductor with line - and valence bands and a plurality of quanta potential pots, which in the line - and valence bands in an active region with a plurality of quanta potential pots are formed, so that the recombination of holes and electrons between the quanta potential pots to the emission of light. At least some of the quanta potential pots have different characteristic emission frequencies, in order to widen the gain spectrum of the emitted light.