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Integrated circuit latch for flip-flop circuit, adjusts pull down delay characteristics of NAND gates by reducing effective ON state impedance of respective pull down paths

机译:用于触发器电路的集成电路锁存器,通过降低各个下拉路径的有效导通状态阻抗来调节与非门的下拉延迟特性

摘要

The latch includes a pair of NAND gates (411,412). The pull down delay characteristics are adjusted using complementary data signals by reducing effective ON state impedance of respective pull down paths, when the output of corresponding NAND gate is pulled from logic 1 to logic 0 by the pull down paths. Independent claims are also included for the following: (a) Multistage latch circuit; (b) Flip-flop circuit for latching data in response to clock signal; (c) Digital magnitude comparator; (d) Analog voltage comparator
机译:锁存器包括一对与非门(411,412)。当相应的NAND门的输出通过下拉路径从逻辑1拉至逻辑0时,通过减小各个下拉路径的有效导通状态阻抗,使用互补数据信号来调节下拉延迟特性。还包括以下方面的独立权利要求:(a)多级锁存电路; (b)触发器电路,用于响应时钟信号锁存数据; (c)数字幅度比较器; (d)模拟电压比较器

著录项

  • 公开/公告号DE10141939A1

    专利类型

  • 公开/公告日2002-03-14

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号DE2001141939

  • 发明设计人 KIM KYU-HYOUN;

    申请日2001-08-22

  • 分类号H03K3/037;

  • 国家 DE

  • 入库时间 2022-08-22 00:26:54

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