Alternating phase mask manufacturing method for patterning semiconductor component, involves etching carrier to different etching depths with respect to thickness of exposure structure covering the carrier

摘要

An irradiation sensitive layer formed on a mask layer of a carrier (1), is removed to form an exposure structure, after which the exposure structure is removed. Another irradiation sensitive layer is developed on the carrier to form an exposure structure (5) having two regions (6,7) with varying thickness. The carrier is etched to different etching depths with respect to thickness of the exposure structure covering the carrier.