Multifunctional electronic device, in particular element with a dynamic, a negative resistance behavior and production method thereof

摘要

The electronic component comprises, topologically integrated within a same structure semi conducting - (1), a first zone a semi conducting - (12, 13, 3, 4, 20) capable of forming a field effect transistor gate, and a second zone, a semi conducting - (12, 20, 18, 19, 11) capable of forming a lateral bipolar transistor, the two zones having a semi - common conductive layer (20), in which is capable of forming the channel of the field-effect transistor and / or the circulation of the base current of the bipolar transistor, the two zones being capable of forming together a structure which is capable of the negative dynamic resistance.