首页> 外国专利> Device for the solidification and for the continuous monitoring of the crystal growth

Device for the solidification and for the continuous monitoring of the crystal growth

机译:固化和连续监测晶体生长的设备

摘要

The invention concerns a device for the solidification and continuous control of crystal growth in an electrically conductive doped material or alloy, based on a liquid or a molten bath, for continuously monitoring crystal growth in said doped material or alloy, in particular for continuously monitoring the dope content in the doped material or the alloyed element content in the alloy. The device is characterised in that it has two cavities using the "Seebeck Monogradient" process whereby the means for electrically short circuiting a first liquid of the non-doped material or the pure unalloyed element in thermal equilibrium with a first solid thereof, and a second liquid of said doped material or of said alloy in thermal equilibrium with a second solid thereof, consist in an isothermal and conductive passage with reduced dimension, connecting the two cavities.
机译:本发明涉及一种用于固化和连续控制基于液体或熔融浴的导电掺杂材料或合金中的晶体生长的装置,用于连续监测所述掺杂材料或合金中的晶体生长,特别是用于连续监测所述掺杂材料或合金中的晶体生长。掺杂材料中的掺杂含量或合金中的合金元素含量。该装置的特征在于,其使用“塞贝克单梯度”工艺具有两个空腔,其中该装置用于使处于热平衡状态的第一非掺杂材料或纯非合金元素的第一液体与第二固体电短路。所述掺杂材料或所述合金与其第二固体处于热平衡的液体,包括具有减小尺寸的等温和导热通道,其连接两个腔。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号