Lithography device using a source of radiation in the extreme ultraviolet and multilayer mirrors a wide spectral band in this field

摘要

Lithography device using a source of radiation in the extreme ultraviolet range and multi-layered mirrors with a broad spectral band within this range. Each mirror (24, 26, 29) comprises a stack of layers of a first material and layers of a second material alternating with the first material. The first material has an atomic number greater than that of the second material. The thickness of pairs of adjacent layers is a monotonic function of the depth in the stack. The source (22) comprises at least one target (28) which emits the radiation by interaction with a laser beam focused on one of its faces. A part (36) of the radiation emitted from the other face is used. The invention is applicable to the manufacture of integrated circuits with a high degree of integration.