Variable capacitance capacitor having channeled conductor layer doped substrate mounted with outer channel second doping and inner isolating region with strongly doped conductor forming voltage threshold path.

摘要

The variable capacitance has a periodic structure with relief zones (5) separated by shoulders (6) in a semiconductor substrate (1) with a first doping level. The walls of the zones are covered with a conductor layer (9,10). The substrate is connected to a first wire (A). The conductor layer is connected to a second wire (B). There are channel regions (8) of a second doping type. A layer section has an isolator (7) with a strongly doped conduction path (11) forming a breakdown condition at a set voltage threshold level.