Highly selective ionic lithography by an active interaction between multicharged and decelerated ions and the dielectric layer to be engraved and the selective neutralization of these ions outside the active interaction

摘要

A method for engraving a thin dielectric layer laid on a semiconductor substrate (100) consists of: (a) producing a configuration of engraving motifs (200); (b) producing a selective interaction between some ions (10); and (c) selectively absorbing by neutralization occurring between the ions of the beam and the mask facing these ions. A method for engraving a thin dielectric layer laid on a semiconductor substrate (100) consists of: (a) producing a configuration of engraving motifs (200) through a mask formed on the dielectric layer (101) by insulation with deep or extreme ultraviolet radiation and revelation of a photosensitive resin (102) making up the mask; (b) producing a selective interaction between some ions (10), from a beam of positive multicharged decelerated ions, and the dielectric layer that is visible following the revelation, the beam of a predetermined density ejects from this layer some grains of material (12) and forms them into zones (111) conforming to the motifs of the mask; and (c) selectively absorbing by neutralization occurring between the ions of the beam and the mask facing these ions.