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The hot high distortion piezoelectric PLZT ceramics which tantalum and niobium is doped

机译:掺杂钽和铌的热高畸变压电PLZT陶瓷

摘要

(57) Abstract It is produced general system (Pb1-xLa x) (Zr yTi1-y) 1- (x/4) - the PLZT piezoelectric ceramics which possesses zMa+4z/aO3 2.0 - 3.0% Nb5+ (the mol %) and 2.0 - 3.0%Ta5+ (the mol %) as the dopant Nb2 O PbO and TiO2 which possess5 which is added in order to make form and Ta2 O5, ZrO by the hot forging process which uses the powder of2, and La2 O3. ZrO the powder of2 and TiO2 y/(1-y) is mixed at mol ratio, this desirable mol ratio is, 55/45 calcination is done with approximately 1300C, - the 1500C is pulverized with the ball mill in acetone, evaporates and becomes the dry powder. Next, this ZrO the blend of2 and TiO2 is connected PbO and La2 O3, Nb2 O the powder of5, and Ta2 O5, and this new blend is pulverized with the ball mill in acetone, evaporates to the dry powder, calcination is done with approximately 700C, - the 850C and the sieve is and is done to divide, the grain size of approximately 0.5 - 1.5 millimicrons obtains. The last PLZT powder which this Nb/Ta is doped forms in desire form by normal temperature compression, continuously in oxygen is sinterred with approximately 1000C - the 1150C. This PLZT ceramic substance furthermore to high density is converted up to approximately 98.5% of theoretical maximum density of the aforementioned substance by heating to approximately 1175C - the 1275C with the uniaxial compression 300 - 1200psi. The distortion hysteresis where the PLZT piezoelectric ceramics which Nb/Ta of the hot high performance which is obtained is doped average grain size of approximately 3 millimicrons, the clear polarization hysteresis loop, is due to the impression of unipolar electric field and decreases, the insulated breaking strength which is larger than 25kV/cm, the linear piezoelectric factor of approximately 790pC/N (d33), maximum it is larger than 0.16% it is warped, at least fatigue life of 108 cycle, and approximately shows Tc of 205 - the 208C.
机译:(57)<摘要>生成通用系统(Pb 1-xLa x )(Zr yTi1-y 1-(x / 4)- PLZT压电陶瓷,具有 zM a + 4z / aO3 2.0-3.0%Nb 5 + (摩尔%)和2.0 -加入3.0%Ta5 +(mol%)作为掺杂剂Nb 2 O PbO和TiO 2 具有 5 形成Ta 2 O 5 ,ZrO的热锻工艺(使用 2 的粉末和La 2 O 3 。 ZrO 2 和TiO 2 y /(1-y)粉末按摩尔比混合,该理想的摩尔比为55/45,煅烧温度约为1300℃ 1500℃用球磨机在丙酮中粉碎,蒸发并成为干粉。接下来,此ZrO将 2 和TiO 2 的混合物连接到PbO和La 2 O 3 ,Nb < Sub> 2 O 5 和Ta 2 O 5 的粉末,然后用球磨机将这种新混合物粉碎将其在丙酮中蒸发,干燥成干粉,在约700℃,850℃下煅烧并进行筛分,得到约0.5-1.5微米的粒度。该Nb / Ta被掺杂的最后的PLZT粉末通过常温压缩以期望的形式形成,在氧气中连续地在大约1000℃至1150℃下烧结。通过加热至约1175℃至1275℃并用单轴压缩300-1200psi将这种PLZT陶瓷物质进一步转化为高密度,可将其转化为上述物质的理论最大密度的约98.5%。得到的高温高性能的Nb / Ta为约3毫微米的平均粒径掺杂的PLZT压电陶瓷的畸变滞后是由于单极性电场的印象而减少的绝缘滞后的。断裂强度大于25kV / cm,线性压电系数约为790pC / N(d 33 ),最大大于0.16%翘曲,至少疲劳寿命为108个循环,并大致显示205的Tc-208C。

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