Piezoelectric and dielectric properties of Cr-doped PSN-PZN-PZT qua-ternary piezoelectric ceramics

摘要

PSN-PZN-PZT + x wt.%Cr2O3, x = 0.0-0.9, were prepared by conventional mixed oxide techniques at sintering temperatures of 1220°C-1300°C for 2 h. The effect of sintering temperature on the microstructure and the piezoelectric properties was investigated by XRD, SEM, and other conventional measurement. The result indicated that with temperature increasing, the valence of Cr ion from Cr5+ or Cr6+ changes into Cr3+, and the piezoelectric properties turn hard. With ni-creasing Cr2O3 content, the amount of rhombohedral phases increases and the morphotropic boundary phase is correspond-ingly shifts to rhombohedral phase. A uniform microstructure and excellent comprehensive properties were obtained at 1240°C as the amount of Cr2O3 is 0.5 wt.%.