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The method of forming the SiO2-based ceramic coating

机译:SiO2基陶瓷涂层的形成方法

摘要

PURPOSE: To form a close ceramic film in which a characteristic is excellent and a crack is eliminated at a low temperature in a short time by forming a film of polysilazane having Si-H bond in the molecule on a substrate and thereafter bringing a mixed solution containing an alkoxysilane and water into contact with the film. ;CONSTITUTION: A film of a polysilazane of a general formula I (but R1 to R3 independently denote a hydrogen atom and an alkyl group respectively and at least one of R1 to R3 denotes a hydrogen atom) having Si-H bond and/or N-H bond is formed on a substrate. A mixed solution containing an alkoxysilane and water is brought into contact with the film. In such a way, the close ceramic film is formed at a low temperature, especially even at normal temperature and applied to plastics and electronic parts.;COPYRIGHT: (C)1996,JPO
机译:用途:通过在基材上形成分子中具有Si-H键的聚硅氮烷薄膜,然后在混合溶液中形成特性优异且在低温下在短时间内消除裂纹的致密陶瓷薄膜含有烷氧基硅烷和水的薄膜接触。 ;组成:通式I(但R 1 至R 3 的聚硅氮烷的膜分别独立地表示氢原子和烷基,并且至少表示R中的一个在基板上形成具有Si-H键和/或NH键的 1 至R 3 。使包含烷氧基硅烷和水的混合溶液与膜接触。这样,致密的陶瓷膜可以在低温下形成,特别是在常温下也可以形成,并应用于塑料和电子零件。;版权所有:(C)1996,日本特许厅

著录项

  • 公开/公告号JP3442160B2

    专利类型

  • 公开/公告日2003-09-02

    原文格式PDF

  • 申请/专利权人 東燃ゼネラル石油株式会社;

    申请/专利号JP19940236881

  • 发明设计人 田代 裕治;

    申请日1994-09-30

  • 分类号B05D7/24;B05D5/00;C04B41/83;C09D183/06;

  • 国家 JP

  • 入库时间 2022-08-22 00:21:59

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