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Non electrolytic indium oxide plated aqueous solution and electroless deposition manner

机译:非电解氧化铟电镀水溶液及化学沉积方式

摘要

PROBLEM TO BE SOLVED: To inexpensively and simply form a high quality thick indium oxide film usable for various application such as optical devices by electroless plating at a relatively low temp. by using an aq. solution containing at least a nitrate ion, an indium ion and a tartrate. ;SOLUTION: The electroless indium oxide plating aq. solution is obtained by incorporating the tartrate, preferably sodium tartrate or sodium potassium tartrate with a nitrate ion and an indium ion. The concentration of the aq. solution is preferably 0.001-0.5 mol/l nitrate ion, 0.001-0.5 mol/l indium ion and 0.00001-0.1 mol/l tartrate, which is 1/2000-1/5 of the indium concentration. The ion source of the nitrate ion and the indium ion is preferably indium nitrate. The high quality indium oxide film is deposited at film forming rate of 0.01-10 Å/s by adjusting the plating aq. solution to be at 10-60°C and 3-9 in pH and dipping a base body thereinto.;COPYRIGHT: (C)1999,JPO
机译:解决的问题:以相对较低的温度通过化学镀廉价且简单地形成可用于各种应用例如光学装置的高质量的厚氧化铟膜。通过使用水溶液该溶液至少包含硝酸根离子,铟离子和酒石酸盐。 ;解决方案:化学镀氧化铟水溶液通过将酒石酸盐,优选酒石酸钠或酒石酸钾钠与硝酸根离子和铟离子结合而获得溶液。水溶液的浓度。溶液优选为0.001-0.5mol / l的硝酸根离子,0.001-0.5mol / l的铟离子和0.00001-0.1mol / l的酒石酸盐,其为铟浓度的1 / 2000-1 / 5。硝酸根离子和铟离子的离子源优选为硝酸铟。通过调节镀液的质量,以0.01-10ang / s的成膜速率沉积高质量的氧化铟膜。溶液的pH值应在10-60℃和3-9,并将基体浸入其中。版权所有:(C)1999,JPO

著录项

  • 公开/公告号JP3416495B2

    专利类型

  • 公开/公告日2003-06-16

    原文格式PDF

  • 申请/专利权人 キヤノン株式会社;

    申请/专利号JP19970317562

  • 发明设计人 荒尾 浩三;

    申请日1997-11-19

  • 分类号C23C18/52;C23C20/08;

  • 国家 JP

  • 入库时间 2022-08-22 00:21:44

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