In electronic beam lithography technology the proximity effect amendment modulo

摘要

PROBLEM TO BE SOLVED: To provide a proximity effect correcting method which can optimize the correction exposufe amount at the center of an unit division in a boundary region where the pattern area density sharply changes. ;SOLUTION: Firstly, (A) each unit division is subjected to bit map expansion, and the pattern area density in each of the unit divisions is calculated. (B) The pattern area density in each of the unit divisions is subjected to averaging process, and the pattern area density is calculated. (C) Stored energy caused by backward scattering is calculated on the basis of an EID(energy intensity distribution) function and the pattern area density. Secondly, (D) when the sum of square of the difference between the stored energy calculated in the above (C) and the stored energy caluculated on the basis of the pattern area density after the averaging process which is obtained in the above (B) is greater than or equal to a specified value, the pattern area density is corrected. The electron beam exposure amount in the unit division is corrected on the basis of the obtained pattern area density after correction.;COPYRIGHT: (C)1997,JPO