PROBLEM TO BE SOLVED: To realize a large capacity LSI wherein the occupied area of a cell is reduced, enabling retrieving operation with low power consumption and at high speed.;SOLUTION: A TCAM cell is constituted of two dynamic type memory cells consisting of MOS transistors 101, 102 and capacitor elements 105, 106, and a coincidence comparing circuit consisting of two MOS transistors 103, 104. Therefore, the occupied area of cell can be reduced.;COPYRIGHT: (C)2003,JPO
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