IMPROVED METHOD FOR Cu ELECTROPLATING IN INTEGRATED CIRCUIT FABRICATION

摘要

PROBLEM TO BE SOLVED: To provide a method for forming copper interconnects having low electroresistivity and high electromigration resistance by using copper electroplating.;SOLUTION: In the copper electroplating process, a negative potential is applied to a semiconductor wafer with the surface of the semiconductor wafer acting as the cathode. The anode is partially or wholly formed with copper. Both the anode and the semiconductor wafer are exposed to a solution comprising copper electrolytes. By reducing the temperature of the copper electrolyte solution below 25°C, the rate of self annealing grain growth increases reducing the final resistivity of the copper lines.;COPYRIGHT: (C)2003,JPO