首页> 外国专利> PFC DECOMPOSITION METHOD, PFC DECOMPOSITION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

PFC DECOMPOSITION METHOD, PFC DECOMPOSITION APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

机译:PFC分解方法,PFC分解装置及半导体装置的制造方法

摘要

PPROBLEM TO BE SOLVED: To provide a PFC decomposition method which enables more efficient decomposition of a PFC gas by enhancing the decomposition ratio of the PFC gas, a PFC decomposition apparatus and a method for manufacturing a semiconductor device. PSOLUTION: The PFC decomposition apparatus is equipped with a chamber in the PFC decomposition apparatus 14 into which the PFC gas discharged from a processing apparatus 10 such as a semiconductor manufacturing apparatus is introduced, a mechanism for generating plasma in the PFC decomposition chamber and a mechanism 16 for supplying an oxidizing gas into the PFC decomposition chamber. The PFC gas is decomposed by the plasma in the decomposition chamber and chemically reacted with the oxidizing gas to detoxify the PFC gas. The oxidizing gas supplied from the supply mechanism 16 is gas containing KMnOSB4/SBor OsOSB4/SB. The decomposition ratio of the PFC gas is enhanced to efficiently decompose the PFC gas. PCOPYRIGHT: (C)2003,JPO
机译:

要解决的问题:提供一种通过提高PFC气体的分解率而能够更有效地分解PFC气体的PFC分解方法,PFC分解装置和半导体装置的制造方法。

解决方案:PFC分解设备在PFC分解设备14中配备有一个腔室,从该腔室中引入了从诸如半导体制造设备之类的处理设备10排出的PFC气体,该机构用于在PFC分解腔室中产生等离子体机构16用于向PFC分解室供给氧化气体。 PFC气体在分解室中被等离子体分解,并与氧化气体发生化学反应以使PFC气体解毒。从供给机构16供给的氧化气体是含有KMnO 4 或OsO 4 的气体。提高PFC气体的分解率以有效地分解PFC气体。

版权:(C)2003,日本特许厅

著录项

  • 公开/公告号JP2003245520A

    专利类型

  • 公开/公告日2003-09-02

    原文格式PDF

  • 申请/专利权人 SEIKO EPSON CORP;

    申请/专利号JP20020049190

  • 发明设计人 SUGIURA TOSHIKAZU;

    申请日2002-02-26

  • 分类号B01D53/70;B01D53/34;C23C16/44;H01L21/205;H01L21/3065;

  • 国家 JP

  • 入库时间 2022-08-22 00:16:43

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号